APM2801B datasheet(2/11 Pages) ANPEC

номер детали	APM2801B

подробное описание детали	P-Channel Enhancement Mode MOSFET with Schottky Diode

PDF	11 Pages

Scroll/Zoom	100%

производитель	ANPEC [Anpec Electronics Coropration]

домашняя страница	http://www.anpec.com.tw

Logo

2 / 11 page

Rev. B.4 - Jun., 2005

www.anpec.com.tw

APM2801B

Absolute Maximum Ratings (T

A = 25°C unless otherwise noted)

Electrical Characteristics (T

A = 25°C unless otherwise noted)

Symbol

Parameter

Rating

Unit

[MOSFET]

VDSS

Drain-Source Voltage

-20

VGSS

Gate-Source Voltage

±10

Continuous Drain Current

-1.5

IDM

300

µs Pulsed Drain Current

VGS=-4.5V

-6

Diode Continuous Forward Current

-1

Maximum Junction Temperature

150

TSTG

Storage Temperature Range

-55 to 150

°C

TA=25°C

0.83

Maximum Power Dissipation

TA=100°C

0.3

RθJA*

Thermal Resistance-Junction to Ambient

150

°C/W

[SBD]

VRRM

Repetitive Peak Reverse Voltage

IFSM

Maximum Peak Forward Surge Current

5.5

Note:

*Surface Mounted on 1in2 pad area, t

≤ 10sec.

APM2801B

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

[MOSFET]

Static Characteristics

BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA

-20

VDS=-16V, VGS=0V

-1

IDSS

Zero Gate Voltage Drain Current

TJ=85°C

-30

µA

VGS(th)

Gate Threshold Voltage

VDS=VGS, IDS=-250µA

-0.45

-0.6

-1

IGSS

Gate Leakage Current

VGS=±10V, VDS=0V

±100

VGS=-4.5V, IDS=-1.5A

145

190

RDS(ON)

a Drain-Source On-state Resistance

VGS=-2.5V, IDS=-1A

180

235

Ω

VSD

Diode Forward Voltage

ISD=-0.5A , VGS=0V

-0.7

-1.3

APM2801B датащи(PDF) 2 Page - Anpec Electronics Coropration

APM2801B датащи(HTML) 2 Page - Anpec Electronics Coropration

Html Pages

1 2 3 4 5 6 7 8 9 10 11

датащи скачать

ссылки URL