APM2800B datasheet(2/11 Pages) ANPEC

номер детали	APM2800B

подробное описание детали	N-Channel Enhancement Mode MOSFET with Schottky Diode

PDF	11 Pages

Scroll/Zoom	100%

производитель	ANPEC [Anpec Electronics Coropration]

домашняя страница	http://www.anpec.com.tw

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2 / 11 page

Rev. B.3 - Jun., 2005

www.anpec.com.tw

APM2800B

Absolute Maximum Ratings (T

A = 25°C unless otherwise noted)

Electrical Characteristics (T

A = 25°C unless otherwise noted)

Symbol

Parameter

Rating

Unit

[MOSFET]

VDSS

Drain-Source Voltage

VGSS

Gate-Source Voltage

±10

ID*

Continuous Drain Current

IDM*

300

µs Pulsed Drain Current

VGS=4.5V

IS*

Diode Continuous Forward Current

Maximum Junction Temperature

150

TSTG

Storage Temperature Range

-55 to 150

°C

TA=25°C

0.83

PD*

Maximum Power Dissipation

TA=100°C

0.3

RθJA*

Thermal Resistance-Junction to Ambient

150

°C/W

[SBD]

VRRM

Repetitive Peak Reverse Voltage

IFSM

Maximum Peak Forward Surge Current

5.5

Note:

*Surface Mounted on 1in2

pad area, t

≤ 10sec.

APM2800B

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

[MOSFET]

Static Characteristics

BVDSS

Drain-Source Breakdown Voltage VGS=0V, IDS=250µA

VDS=16V, VGS=0V

IDSS

Zero Gate Voltage Drain Current

TJ=85°C

µA

VGS(th)

Gate Threshold Voltage

VDS=VGS, IDS=250µA

0.45

0.6

IGSS

Gate Leakage Current

VGS=±10V, VDS=0V

±100

VGS=4.5V, IDS=3A

RDS(ON)

Drain-Source On-state Resistance

VGS=2.5V, IDS=1.7A

110

Ω

VSD

Diode Forward Voltage

ISD=0.5A, VGS=0V

0.7

1.3

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