APM2300AA datasheet(2/10 Pages) ANPEC

номер детали	APM2300AA

подробное описание детали	N-Channel Enhancement Mode MOSFET

PDF	10 Pages

Scroll/Zoom	100%

производитель	ANPEC [Anpec Electronics Coropration]

домашняя страница	http://www.anpec.com.tw

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2 / 10 page

Rev. B.1 - Mar., 2005

www.anpec.com.tw

APM2300AA

Absolute Maximum Ratings (T

A = 25°C unless otherwise noted)

Electrical Characteristics (T

A = 25°C unless otherwise noted)

Symbol

Parameter

Rating

Unit

VDSS

Drain-Source Voltage

VGSS

Gate-Source Voltage

±12

ID*

Continuous Drain Current

IDM*

300

µs Pulsed Drain Current

VGS=10V

IS*

Diode Continuous Forward Current

Maximum Junction Temperature

150

TSTG

Storage Temperature Range

-55 to 150

°C

TA=25°C

0.83

PD*

Maximum Power Dissipation

TA=100°C

0.3

RθJA*

Thermal Resistance-Junction to Ambient

150

°C/W

Note:

*Surface Mounted on 1in

2 pad area, t

≤ 10sec.

APM2300AA

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

Static Characteristics

BVDSS

Drain-Source Breakdown Voltage VGS=0V, IDS=250

µA

VDS=16V, VGS=0V

IDSS

Zero Gate Voltage Drain Current

TJ=85°C

µA

VGS(th)

Gate Threshold Voltage

VDS=VGS, IDS=250

µA

0.5

0.7

IGSS

Gate Leakage Current

VGS=±12V, VDS=0V

±100

VGS=10V, IDS=6A

VGS=4.5V, IDS=3A

RDS(ON)

Drain-Source On-state Resistance

VGS=2.5V, IDS=2A

Ω

VSD

Diode Forward Voltage

ISD=1.25A, VGS=0V

0.7

1.3

Gate Charge Characteristics

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDS=10V, VGS=4.5V,

IDS=6A

1.1

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