APM2095PD datasheet(2/10 Pages) ANPEC

номер детали	APM2095PD

подробное описание детали	P-Channel Enhancement Mode MOSFET

PDF	10 Pages

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производитель	ANPEC [Anpec Electronics Coropration]

домашняя страница	http://www.anpec.com.tw

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2 / 10 page

Rev. B.1 - Apr., 2005

APM2095PD

www.anpec.com.tw

Absolute Maximum Ratings (T

A = 25°C unless otherwise noted)

Electrical Characteristics (T

A = 25°C unless otherwise noted)

Symbol

Parameter

Rating

Unit

VDSS

Drain-Source Voltage

-20

VGSS

Gate-Source Voltage

±10

ID*

Continuous Drain Current

-3

IDM*

300

µs Pulsed Drain Current

VGS=-4.5V

-12

IS*

Diode Continuous Forward Current

-1

Maximum Junction Temperature

150

TSTG

Storage Temperature Range

-55 to 150

°C

TA=25°C

1.47

PD*

Power Dissipation for Single Operation

TA=100°C

0.58

RθJA*

Thermal Resistance-Junction to Ambient

°C/W

Note:

*Surface Mounted on 1in

2 pad area, t

≤ 10sec.

APM2095PD

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

Static Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, IDS=-250

µA

-20

VDS=-12V, VGS=0V

-1

IDSS

Zero Gate Voltage Drain Current

TJ=85°C

-30

µA

VGS(th)

Gate Threshold Voltage

VDS=VGS, IDS=-250

µA

-0.5

-0.7

-1

IGSS

Gate Leakage Current

VGS=±10V, VDS=0V

±100

VGS=-4.5V, IDS=-3A

100

RDS(ON)

a Drain-Source On-state Resistance

VGS=-2.5V, IDS=-1.5A

100

130

Ω

VSD

Diode Forward Voltage

ISD=-0.5A , VGS=0V

-0.7

-1.3

Gate Charge Characteristics

Total Gate Charge

11.5

Qgs

Gate-Source Charge

1.7

Qgd

Gate-Drain Charge

VDS=-10V, VGS=-4.5V,

IDS=-3A

1.8

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