AMT8412

Rev 0.1

2

ELECTRICAL CHARACTERISTICS

Table 1: Absolute Maximum Ratings

PARAMETER

MIN

MAX

UNIT

Supply Voltage

-0.5

+3.8

V

Optical Input Power

-

+ 5

dBm

Storage Temperature

- 40

+ 125

oC

Stresses in excess of the absolute ratings may cause permanent damage. Functional

operation is not implied under these conditions. Exposure to absolute ratings for extended

periods of time may adversely affect reliability.

Table 2: Electrical Specifications

PARAMETER

MIN

TYP

MAX

UNIT

Wavelength

1250

-

1620

nm

Detector Active Area

-

70

-

um

Sensitivity

(1)

-23

-

dBm

Overload

2

-

dBm

Responsivity 1550nm

0.95

A/W

Responsivity 1310nm

0.85

A/W

Vpd resistance

240

270

340

Ω

Small signal transimpedance gain (50

Ω)

1.8

3.5

5.0

K

Ω

Small signal transimpedance gain (

∞ Ω)

3.6

7

10

K

Ω

Small signal 3dB bandwidth

1.7

1.9

MHz

Output resistance

40

53

65

Ω

Output voltage swing (differential 50

Ω)

90

220

400

Rise/Fall times 20% / 80%

-

200

-

ps

TIA supply voltage

3.0

3.3

3.6

V

TIA supply current

-

26

38

mA

Power consumption (3.3V)

-

86

134

mW

Operating temperature

-40

25

+85

oC

2.5Gb/s PRBS 2

Figure 2: Pin location (4-pin)

OUTQ

OUT

VCC

GND

(Bottom View)

Figure 3: Pin location (5-pin)

VCC

OUTQ

GND

OUT

VPD

(Bottom View)

Table 3: Pin description

NAME

DESCRIPTION

OUT

TIA Output (Non-Inverted)

VCC

Supply Voltage (+3.3V)

OUTQ

TIA Output (Inverted)

GND

Ground