DMN5L06 datasheet(3/4 Pages) DIODES

номер детали	DMN5L06

подробное описание детали	SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

PDF	4 Pages

Scroll/Zoom	100%

производитель	DIODES [Diodes Incorporated]

домашняя страница	http://www.diodes.com

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3 / 4 page

DS30614 Rev. 3 - 2

3 of 4

DMN5L06

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T , CHANNEL TEMPERATURE (°C)

Fig. 3 Gate Threshold Voltage

vs. Channel Temperature

-50

-25

100 125 150

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

-75

= 10V

I= 1mA

Pulsed

0.1

DRAIN CURRENT (A)

Fig. 4 Static Drain-Source On-Resistance

Vs. Drain Current

0.001

0.01

0.1

= 10V

Pulsed

T = 150 C

T= -55 C

T= 125 C

T= -25 C

T= 85 C

T= 0 C

T= 25 C

I , DRAIN CURRENT (A)

Fig. 5 Static Drain-Source On-Resistance

vs. Drain Current

0.1

0.001

0.01

0.1

V= 5V

Pulsed

T= -55 C

T= 150 C

T= -25 C

T= 25 C

T= 0 C

T = 125 C

T= 85 C

GATE SOURCE VOLTAGE (V)

Fig. 6 Static Drain-Source On-Resistance

vs. Gate-Source Voltage

GS,

T= 25 C

Pulsed

I = 140mA

I = 280mA

T , CHANNEL TEMPERATURE ( C)

Fig. 7

Static Drain-Source On-State Resistance

vs. Channel Temperature

0.5

0.9

0.7

1.9

1.7

1.5

1.3

1.1

2.1

2.5

2.3

-50

-25

100

125 150

I = 140mA

= 10V

Pulsed

I = 280mA

0.001

0.01

0.1

0.5

Fig. 8 Reverse Drain Current

vs. Source-Drain Voltage

SD SOURCE-DRAIN VOLTAGE (V)

T= -55 C

T= -25 C

T= 25 C

T= 85 C

T= 125 C

T= 150 C

V= 0V

Pulsed

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