APM2322 datasheet(2/9 Pages) ANPEC

2 / 9 page

 ANPEC Electronics Corp.

Rev. A.1 - Oct., 2003

www.anpec.com.tw

APM2322

Notes

a : Pulse test ; pulse width

≤300µs, duty cycle ≤ 2%

b : Guaranteed by design, not subject to production testing

Absolute Maximum Ratings (Cont.) (T

A = 25°C unless otherwise noted)

Symbol

Parameter

Rating

Unit

TA=25

°C

0.8

Maximum Power Dissipation

TA=100

°C

0.3

Maximum Junction Temperature

150

°C

TSTG

Storage Temperature Range

-55 to 150

°C

RθJA

Thermal Resistance – Junction to Ambient

150

°C/W

APM2322

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

Static

BVDSS

Drain-Source Breakdown

Voltage

VGS=0V , IDS=250

µA

IDSS

Zero Gate Voltage Drain

Current

VDS=16V , VGS=0V

µA

VGS(th)

Gate Threshold Voltage

VDS=VGS , IDS=250

µA

0.6

0.75

1.5

IGSS

Gate Leakage Current

VGS=

±8V , V

DS=0V

±10

µA

VGS=4.5V , IDS=1.5A

195

260

RDS(ON)

Drain-Source On-state

Resistance

VGS=2.5V , IDS=0.8A

295

350

Ω

VSD

Diode Forward Voltage

ISD=0.5A , VGS=0V

0.8

1.3

Dynamic

Total Gate Charge

1.4

1.8

Qgs

Gate-Source Charge

0.22

Qgd

Gate-Drain Charge

VDS=10V , IDS= 1.5A

VGS=4.5V

0.33

td(ON)

Turn-on Delay Time

Turn-on Rise Time

td(OFF)

Turn-off Delay Time

Turn-off Fall Time

VDD=10V , IDS=1.5A,

VGEN=4.5V , RG=6

Ω

Ciss

Input Capacitance

152

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VGS=0V

VDS=15V

Frequency=1.0MHz

Electrical Characteristics (T

A = 25°C unless otherwise noted)

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