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BC847BVC датащи(PDF) 2 Page - Diodes Incorporated |
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BC847BVC датащи(HTML) 2 Page - Diodes Incorporated |
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2 / 3 page ![]() DS30638 Rev. 3 - 2 2 of 3 BC847BVC www.diodes.com Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage (Note 5) V(BR)CBO 50 — — V IC = 10 µA, IB = 0 Collector-Emitter Breakdown Voltage (Note 5) V(BR)CEO 45 — — V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage (Note 5) V(BR)EBO 6 — — V IE = 1 µA, IC = 0 DC Current Gain (Note 5) hFE 200 290 450 — VCE = 5.0V, IC = 2.0mA Collector-Emitter Saturation Voltage (Note 5) VCE(SAT) — — 100 300 mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Saturation Voltage (Note 5) VBE(SAT) — 700 900 — mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Voltage (Note 5) VBE 580 — 660 — 700 770 mV VCE = 5.0V, IC = 2.0mA VCE = 5.0V, IC = 10mA Collector-Emitter Cutoff Current (Note 5) ICBO ICBO — — 15 5.0 nA µA VCB = 30V VCB = 30V, TA = 150°C Gain Bandwidth Product fT 100 — — MHz VCE = 5.0V, IC = 10mA, f = 100MHz Output Capacitance COBO — — 4.5 pF VCB = 10V, f = 1.0MHz Noise Figure NF — — 10 dB VCE = 5V, RS = 2.0k Ω, f = 1.0kHz, BW = 200Hz Notes: 5. Short duration pulse test used to minimize self-heating effect. 6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Date Code Key 4VK = Product Type Marking Code YM = Date Code Marking Y = Year (ex: P = 2003) M = Month (ex: 9 = September) 4VK YM Marking Information Ordering Information (Note 6) Device Packaging Shipping BC847BVC-7 SOT-563 3000/Tape & Reel Year 2005 2006 2007 2008 2009 Code S T U V W |
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