MSD601 datasheet(1/1 Pages) ETL

номер детали	MSD601

подробное описание детали	NPN General Purpose Amplifier Transistors Surface Mount

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N6–1/1

MSD601–RT1

MSD601–ST1

NPN General Purpose Amplifier

Transistors Surface Mount

CASE

318D–03, STYLE1

SC–59

MAXIMUM RATINGS (T A = 25°C)

Rating

Symbol

Value

Unit

Collector-Base Voltage

V(BR)CBO

60

Vdc

Collector-Emitter Voltage

V(BR)CEO

50

Vdc

Emitter-Base Voltage

V(BR)EBO

7.0

Vdc

Collector Current–Continuous

I C

100

mAdc

Collector Current–Peak

I C(P)

200

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Power Dissipation

P D

200

mW

Junction Temperature

T J

150

°C

Storage Temperature

T stg

–55 ~ +150

°C

ELECTRICAL CHARACTERISTICS (T A = 2

5°C)

Characteristic

Symbol

Min

Max

Unit

Collector-Emitter Breakdown Voltage (IC = 2.0 mAdc, I B = 0)

V(BR)CEO

50

—

Vdc

Collector-Base Breakdown Voltage (I C = 10

µAdc, I

E = 0)

V(BR)CBO

60

—

Vdc

Emitter-Base Breakdown Voltage (I E = 10

µAdc, I

C = 0)

V(BR)EBO

7.0

—

Vdc

Collector-Base Cutoff Current (V CB = 45 Vdc, I E = 0)

I CBO

—

0.1

µAdc

Collector-Emitter Cutoff Current (V CE = 10 Vdc, I B = 0)

I CEO

—

100

nAdc

DC Current Gain (1)

—

(V CE = 10 Vdc, I C = 2.0 mAdc)

MSD601-RT1

hFE1

210

340

MSD601-ST1

290

460

(V CE = 2.0 Vdc, I C = 100 mAdc)

hFE2

90

—

Collector-Emitter Saturation Voltage (I C = 100 mAdc, I B = 10 mAdc)

VCE(sat)

—

0.5

Vdc

1. Pulse Test: Pulse Width < 300

µs, D.C. < 2%.

DEVICE MARKING

The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month

in which the part was manufactured.

YSX

Marking Symbol

MSD601–RT1

MSD601–ST1

YRX

COLLECTOR

3

2

1

BASE

EMITTER

1

3

2

Аналогичный номер детали - MSD601

производитель	номер детали	датащи	подробное описание детали
Weitron Technology	MSD601	431Kb / 6P	NPN General Purpose Transistors
Motorola, Inc	MSD601-RT1	110Kb / 4P	NPN General Purpose Amplifier Transistors Surface Mount?
Leshan Radio Company	MSD601-RT1	40Kb / 1P	NPN General Purpose Amplifier Transistors Surface Mount
ON Semiconductor	MSD601-RT1	48Kb / 4P	NPN General Purpose Amplifier Transistors Surface Mount January, 2006 ??Rev. 7
ON Semiconductor	MSD601-RT1	85Kb / 3P	NPN General Purpose Amplifier Transistors Surface Mount July, 2012 ??Rev. 9

More results

Аналогичное описание - MSD601

производитель	номер детали	датащи	подробное описание детали
Motorola, Inc	2SC4617	128Kb / 6P	NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
	MSB710QT1	125Kb / 6P	PNP General Purpose Amplifier Transistors Surface Mount
	MSD1819ART1	153Kb / 6P	NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
	MSD601RT1	110Kb / 4P	NPN General Purpose Amplifier Transistors Surface Mount?
ON Semiconductor	MMBT3904WT1	296Kb / 12P	GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
ON Semiconductor	MSD1819A-RT1	101Kb / 6P	NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT REV 2
Leshan Radio Company	MSD601-RT1	40Kb / 1P	NPN General Purpose Amplifier Transistors Surface Mount
ON Semiconductor	2SC4617	48Kb / 4P	NPN Silicon General Purpose Amplifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT July, 2004 ??Rev. 4
	MSD601-RT1	48Kb / 4P	NPN General Purpose Amplifier Transistors Surface Mount January, 2006 ??Rev. 7
	MSD601-RT1	85Kb / 3P	NPN General Purpose Amplifier Transistors Surface Mount July, 2012 ??Rev. 9

More results

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Аналогичный номер детали - MSD601

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