6.6 Electrical Characteristics

At TA = 25°C unless otherwise noted

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VRWM

Reverse stand-off voltage

IIO < 50 nA, across operating

temperature range

3.6

V

ILEAKAGE

Leakage current at 3.6 V

VIO = 3.6 V, I/O to GND

0.1

10

nA

VBRF

Breakdown voltage, I/O to GND (1)

IIO = 1 mA

4.5

7.5

V

VFWD

Forward Voltage, GND to I/O (1)

IIO = 1 mA

0.8

V

VHOLD

Holding voltage, I/O to GND (2)

IIO = 1 mA

5.1

V

VCLAMP

Clamping voltage

IPP = 6 A (8/20 µs Surge), I/O to GND

6.3

V

IPP = 16 A (100 ns TLP), I/O to GND

6.8

V

IPP = 16 A (100 ns TLP), GND to I/O

4.7

V

RDYN

Dynamic resistance

I/O to GND, 100 ns TLP, between 10

to 20 A IPP

0.13

Ω

GND to I/O , 100 ns TLP, between 10

to 20 A IPP

0.2

CLINE

Line capacitance, IO to GND

VIO = 0 V, Vp-p = 30 mV, f = 1 MHz

0.9

1.1

pF

(1)

VBRF and VBRR are defined as the voltage obtained at 1 mA when sweeping the voltage up, before the device latches into the

snapback state

(2)

VHOLD is defined as the voltage when 1 mA is applied, after the device has successfully latched into the snapback state.

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ESD321

SLVSEN8A – JULY 2018 – REVISED DECEMBER 2022

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