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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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APTM120TDU57P датащи(PDF) 1 Page - Advanced Power Technology |
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APTM120TDU57P датащи(HTML) 1 Page - Advanced Power Technology |
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1 / 6 page  APTM120TDU57P APT website – http://www.advancedpower.com 1 – 6 S3/S4 G5 D5 S5 S5/S6 S1 D1 G1 S1/S2 S3 D3 G3 D6 S6 G6 D2 G2 S2 D4 S4 G4 G5 G6 S6 S5 G3 D 3 D 5 S3/S4 G4 S4 D 6 D 4 S3 D 1 S5/S6 S2 G2 S1 G1 D 2 S1/S2 Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 1200 V Tc = 25°C 17 ID Continuous Drain Current Tc = 80°C 13 IDM Pulsed Drain current 68 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 570 m Ω PD Maximum Power Dissipation Tc = 25°C 390 W IAR Avalanche current (repetitive and non repetitive) 22 A EAR Repetitive Avalanche Energy 50 EAS Single Pulse Avalanche Energy 3000 mJ VDSS = 1200V RDSon = 570mΩ max @ Tj = 25°C ID = 17A @ Tc = 25°C Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Very low (12mm) profile • Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability Triple dual common source MOSFET Power Module |
Аналогичный номер детали - APTM120TDU57P |
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Аналогичное описание - APTM120TDU57P |
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