DMC6022SSD

Document number: DS39056 Rev. 1 - 2

2 of 10

www.diodes.com

December 2016

© Diodes Incorporated

DMC6022SSD

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Q1

Q2

Unit

Drain-Source Voltage

VDSS

60

-60

V

Gate-Source Voltage

VGSS

±20

±20

V

Continuous Drain Current (Note 6)

N-Channel: VGS = 10V

P-Channel: VGS = -10V

Steady

State

TA = +25°C

TA = +70°C

ID

6.0

5.0

-5.0

-4.0

A

t<10s

TA = +25°C

TA = +70°C

ID

8.4

6.7

-6.5

-5.2

A

Maximum Body Diode Forward Current (Note 6)

IS

2.0

-2.0

A

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

45

-35

A

Avalanche Current (Note 7) L = 0.1mH

IAS

22

-25

A

Avalanche Energy (Note 7) L = 0.1mH

EAS

24

24

mJ

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

TA = +25°C

PD

1.5

W

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

RJA

102

°C/W

t < 10s

64

Total Power Dissipation (Note 6)

TA = +25°C

PD

2.0

W

Thermal Resistance, Junction to Ambient (Note 6)

Steady state

RJA

74

°C/W

t<10s

47

Thermal Resistance, Junction to Case (Note 6)

RJC

10

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics N-Channel Q1 (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

60

—

—

V

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current TJ = +25°C

IDSS

—

—

1

µA

VDS = 60V, VGS = 0V

Gate-Source Leakage

IGSS

—

—

±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

1.0

—

3.0

V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

21

29

m

Ω

VGS = 10V, ID = 5A

22

34

VGS = 6V, ID = 5A

Diode Forward Voltage

VSD

—

0.8

1.2

V

VGS = 0V, IS = 1.7A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

—

2110

—

pF

VDS = 30V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

—

78

—

pF

Reverse Transfer Capacitance

Crss

—

51

—

pF

Gate Resistance

Rg

—

2.0

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge at (VGS = 4.5V)

Qg

—

14

—

nC

VDS = 30V, ID = 6A

Total Gate Charge at (VGS = 10V)

Qg

—

32

—

nC

Gate-Source Charge

Qgs

—

7.0

—

nC

Gate-Drain Charge

Qgd

—

4.0

—

nC

Turn-On Delay Time

tD(ON)

—

5.4

—

ns

VGS = 10V, VDS = 30V,

RG = 6Ω, ID = 1A

Turn-On Rise Time

tR

—

4.4

—

ns

Turn-Off Delay Time

tD(OFF)

—

30.4

—

ns

Turn-Off Fall Time

tF

—

8.4

—

ns

Body Diode Reverse Recovery Time

tRR

—



18.1

—



ns

IF = 1.7A, di/dt = 100A/μs

Body Diode Reverse Recovery Charge

QRR

—



12.5

—



nC

IF = 1.7A, di/dt = 100A/μs

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. UIS in production with L = 0.1mH, starting TA = +25°C.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.