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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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APTM120A29FT датащи(PDF) 1 Page - Advanced Power Technology |
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APTM120A29FT датащи(HTML) 1 Page - Advanced Power Technology |
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1 / 6 page  APTM120A29FT APT website – http://www.advancedpower.com 1 – 6 G1 Q1 VBUS NT C2 OUT S1 G2 S2 Q2 0/VBUS NT C1 S2 G2 NTC2 OUT OUT VBUS NTC1 S1 S2 G2 0/VBUS G1 Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 1200 V Tc = 25°C 34 ID Continuous Drain Current Tc = 80°C 25 IDM Pulsed Drain current 136 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 290 m Ω PD Maximum Power Dissipation Tc = 25°C 780 W IAR Avalanche current (repetitive and non repetitive) 22 A EAR Repetitive Avalanche Energy 50 EAS Single Pulse Avalanche Energy 3000 mJ VDSS = 1200V RDSon = 290mΩ max @ Tj = 25°C ID = 34A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile Phase Leg MOSFET Power Module |
Аналогичный номер детали - APTM120A29FT |
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Аналогичное описание - APTM120A29FT |
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