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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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APTM120A15F датащи(PDF) 2 Page - Advanced Power Technology |
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APTM120A15F датащи(HTML) 2 Page - Advanced Power Technology |
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2 / 6 page  APTM120A15F APT website – http://www.advancedpower.com 2 – 6 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit BVDSS Drain - Source Breakdown Voltage VGS = 0V, ID = 1mA 1200 V VGS = 0V,VDS = 1200V Tj = 25°C 400 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 1000V Tj = 125°C 2000 µA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 30A 150 m Ω VGS(th) Gate Threshold Voltage VGS = VDS, ID = 10mA 3 5 V IGSS Gate – Source Leakage Current VGS = ±30V, VDS = 0V ±250 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 20.6 Coss Output Capacitance 3.08 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 0.52 nF Qg Total gate Charge 748 Qgs Gate – Source Charge 96 Qgd Gate – Drain Charge VGS = 10V VBus = 600V ID = 60A 480 nC Td(on) Turn-on Delay Time 20 Tr Rise Time 15 Td(off) Turn-off Delay Time 160 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 60A RG = 1.2Ω 45 ns Eon Turn-on Switching Energy 3.96 Eoff Turn-off Switching Energy Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 60A, RG = 1.2Ω 2.74 mJ Eon Turn-on Switching Energy 6.26 Eoff Turn-off Switching Energy Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 60A, RG = 1.2Ω 3.43 mJ Source - Drain diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tc = 25°C 60 IS Continuous Source current (Body diode) Tc = 80°C 45 A VSD Diode Forward Voltage VGS = 0V, IS = - 60A 1.3 V dv/dt Peak Diode Recovery 18 V/ns Tj = 25°C 320 trr Reverse Recovery Time IS = - 60A VR = 600V diS/dt = 400A/µs Tj = 125°C 650 ns Tj = 25°C 8 Qrr Reverse Recovery Charge IS = - 60A VR = 600V diS/dt = 400A/µs Tj = 125°C 28 µC Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 60A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C |
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