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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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APTM100DDA35T3 датащи(PDF) 2 Page - Advanced Power Technology |
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APTM100DDA35T3 датащи(HTML) 2 Page - Advanced Power Technology |
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2 / 6 page  APTM100DDA35T3 APT website – http://www.advancedpower.com 2 – 6 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit BVDSS Drain - Source Breakdown Voltage VGS = 0V, ID = 250µA 1000 V VGS = 0V,VDS = 1000V Tj = 25°C 250 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 800V Tj = 125°C 1000 µA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 11A 350 m Ω VGS(th) Gate Threshold Voltage VGS = VDS, ID = 2.5mA 3 5 V IGSS Gate – Source Leakage Current VGS = ±30V, VDS = 0V ±100 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 5.2 Coss Output Capacitance 0.88 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 0.16 nF Qg Total gate Charge 186 Qgs Gate – Source Charge 24 Qgd Gate – Drain Charge VGS = 10V VBus = 500V ID = 22A 122 nC Td(on) Turn-on Delay Time 18 Tr Rise Time 12 Td(off) Turn-off Delay Time 155 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 670V ID = 22A RG = 5Ω 40 ns Eon Turn-on Switching Energy 900 Eoff Turn-off Switching Energy Inductive switching @ 25°C VGS = 15V, VBus = 670V ID = 22A, RG = 5Ω 623 µJ Eon Turn-on Switching Energy 1423 Eoff Turn-off Switching Energy Inductive switching @ 125°C VGS = 15V, VBus = 670V ID = 22A, RG = 5Ω 779 µJ Diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 1000 V Tj = 25°C 250 IRM Maximum Reverse Leakage Current VR=1000V Tj = 125°C 750 µA IF(AV) Maximum Average Forward Current 50% duty cycle Tc = 70°C 30 A IF = 30A 1.9 2.3 IF = 60A 2.2 VF Diode Forward Voltage IF = 30A Tj = 125°C 1.7 V Tj = 25°C 290 trr Reverse Recovery Time Tj = 125°C 390 ns Tj = 25°C 670 Qrr Reverse Recovery Charge IF = 30A VR = 667V di/dt=200A/µs Tj = 125°C 2350 nC Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. |
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