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APTM20AM10FT датащи(PDF) 2 Page - Advanced Power Technology |
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APTM20AM10FT датащи(HTML) 2 Page - Advanced Power Technology |
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2 / 6 page ![]() APTM20AM10FT APT website – http://www.advancedpower.com 2 – 6 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VGS = 0V,VDS = 200V Tj = 25°C 375 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 160V Tj = 125°C 1500 µA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 87.5A 10 12 m Ω VGS(th) Gate Threshold Voltage VGS = VDS, ID = 5mA 3 5 V IGSS Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±150 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 13.7 Coss Output Capacitance 4.36 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 0.19 nF Qg Total gate Charge 224 Qgs Gate – Source Charge 86 Qgd Gate – Drain Charge VGS = 10V VBus = 100V ID = 150A 94 nC Td(on) Turn-on Delay Time 28 Tr Rise Time 56 Td(off) Turn-off Delay Time 81 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 150A RG = 2.5Ω 99 ns Eon Turn-on Switching Energy 926 Eoff Turn-off Switching Energy Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 150A, RG = 2.5Ω 910 µJ Eon Turn-on Switching Energy 1216 Eoff Turn-off Switching Energy Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 150A, RG = 2.5Ω 1062 µJ Source - Drain diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tc = 25°C 175 IS Continuous Source current (Body diode) Tc = 80°C 131 A VSD Diode Forward Voltage VGS = 0V, IS = - 150A 1.3 V dv/dt Peak Diode Recovery 8 V/ns Tj = 25°C 220 trr Reverse Recovery Time Tj = 125°C 420 ns Tj = 25°C 2.14 Qrr Reverse Recovery Charge IS = - 150A VR = 133V diS/dt = 200A/µs Tj = 125°C 5.8 µC dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 150A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C |
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