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APTM10HM05F датащи(PDF) 2 Page - Advanced Power Technology

номер детали APTM10HM05F
подробное описание детали  Full - Bridge MOSFET Power Module
PDF  6 Pages
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производитель  ADPOW [Advanced Power Technology]
домашняя страница  http://www.advpowertech.com
Logo ADPOW - Advanced Power Technology

APTM10HM05F датащи(HTML) 2 Page - Advanced Power Technology

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APTM10HM05F
APT website – http://www.advancedpower.com
2 - 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 100V
Tj = 25°C
200
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 80V
Tj = 125°C
1000
µA
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 125A
4.5
5
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 5mA
2
4
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±200
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
20
Coss
Output Capacitance
8
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
2.9
nF
Qg
Total gate Charge
700
Qgs
Gate – Source Charge
120
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 50V
ID = 250A
360
nC
Td(on)
Turn-on Delay Time
80
Tr
Rise Time
165
Td(off)
Turn-off Delay Time
280
Tf
Fall Time
Resistive Switching
VGS = 15V
VBus = 66V
ID = 250A
RG = 2.5 Ω
135
ns
Eon
Turn-on Switching Energy
1.1
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 66V
ID = 250A, RG =2.5Ω
1.2
mJ
Eon
Turn-on Switching Energy
1.22
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 66V
ID = 250A, RG = 2.5Ω
1.28
mJ
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
278
IS
Continuous Source current
(Body diode)
Tc = 80°C
207
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 250A
1.3
V
dv/dt
Peak Diode Recovery
5
V/ns
Tj = 25°C
190
trr
Reverse Recovery Time
IS = - 250A
VR = 66V
diS/dt = 200A/µs
Tj = 125°C
370
ns
Tj = 25°C
0.8
Qrr
Reverse Recovery Charge
IS = - 250A
VR = 66V
diS/dt = 200A/µs
Tj = 125°C
3.4
µC
Eon includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 278A
di/dt
≤ 200A/µs
VR ≤ VDSS
Tj ≤ 150°C



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