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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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APTM10DHM09T датащи(PDF) 1 Page - Advanced Power Technology |
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APTM10DHM09T датащи(HTML) 1 Page - Advanced Power Technology |
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1 / 6 page  APTM10DHM09T APT website – http://www.advancedpower.com 1 – 6 NTC2 S4 G4 VBUS SENSE VBUS Q1 G1 S1 OUT1 OUT2 Q4 CR3 0/VBUS CR2 0/VBUSSENSE NTC1 NTC2 OUT2 OUT1 VBUS VBUS SENSE S4 G4 S1 NTC1 0/VBUS 0/VBUS SENSE G1 Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 100 V Tc = 25°C 139 ID Continuous Drain Current Tc = 80°C 100 IDM Pulsed Drain current 430 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 9.5 m Ω PD Maximum Power Dissipation Tc = 25°C 390 W IAR Avalanche current (repetitive and non repetitive) 100 A EAR Repetitive Avalanche Energy 50 EAS Single Pulse Avalanche Energy 3000 mJ VDSS = 100V RDSon = 9mΩ typ @ Tj = 25°C ID = 139A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile Asymmetrical - Bridge MOSFET Power Module |
Аналогичный номер детали - APTM10DHM09T |
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Аналогичное описание - APTM10DHM09T |
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