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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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APTM10DAM05T датащи(PDF) 2 Page - Advanced Power Technology |
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APTM10DAM05T датащи(HTML) 2 Page - Advanced Power Technology |
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2 / 6 page  APTM10DAM05T APT website – http://www.advancedpower.com 2 - 6 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VGS = 0V,VDS = 100V Tj = 25°C 200 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 80V Tj = 125°C 1000 µA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 125A 4.5 5 m Ω VGS(th) Gate Threshold Voltage VGS = VDS, ID = 5mA 2 4 V IGSS Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±200 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 20 Coss Output Capacitance 8 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 2.9 nF Qg Total gate Charge 700 Qgs Gate – Source Charge 120 Qgd Gate – Drain Charge VGS = 10V VBus = 50V ID = 250A 360 nC Td(on) Turn-on Delay Time 80 Tr Rise Time 165 Td(off) Turn-off Delay Time 280 Tf Fall Time Resistive Switching VGS = 15V VBus = 66V ID = 250A RG = 2.5 Ω 135 ns Eon Turn-on Switching Energy 1.1 Eoff Turn-off Switching Energy Inductive switching @ 25°C VGS = 15V, VBus = 66V ID = 250A, RG =2.5Ω 1.2 mJ Eon Turn-on Switching Energy 1.22 Eoff Turn-off Switching Energy Inductive switching @ 125°C VGS = 15V, VBus = 66V ID = 250A, RG = 2.5Ω 1.28 mJ Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. Chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 200 V Tj = 25°C 350 IRM Maximum Reverse Leakage Current VR=200V Tj = 125°C 600 µA IF(AV) Maximum Average Forward Current 50% duty cycle Tc = 80°C 200 A IF = 200A 1 IF = 400A 1.4 VF Diode Forward Voltage IF = 200A Tj = 125°C 0.9 V Tj = 25°C 60 trr Reverse Recovery Time Tj = 125°C 110 ns Tj = 25°C 400 Qrr Reverse Recovery Charge IF = 200A VR = 133V di/dt =400A/µs Tj = 125°C 1680 nC |
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