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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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APTM10AM05FT датащи(PDF) 1 Page - Advanced Power Technology |
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APTM10AM05FT датащи(HTML) 1 Page - Advanced Power Technology |
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1 / 6 page  APTM10AM05FT APT website – http://www.advancedpower.com 1 - 6 G1 Q1 VBUS NTC2 OUT S1 G2 S2 Q2 0/VBUS NTC1 S2 G2 NTC2 OUT OUT VBUS NTC1 S1 S2 G2 0/VBUS G1 Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 100 V Tc = 25°C 278 ID Continuous Drain Current Tc = 80°C 207 IDM Pulsed Drain current 1100 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 5 m Ω PD Maximum Power Dissipation Tc = 25°C 780 W IAR Avalanche current (repetitive and non repetitive) 100 A EAR Repetitive Avalanche Energy 50 EAS Single Pulse Avalanche Energy 3000 mJ VDSS = 100V RDSon = 4.5mΩ typ @ Tj = 25°C ID = 278A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS V® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile Phase leg MOSFET Power Module |
Аналогичный номер детали - APTM10AM05FT |
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Аналогичное описание - APTM10AM05FT |
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