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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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APTM10AM02F датащи(PDF) 2 Page - Advanced Power Technology |
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APTM10AM02F датащи(HTML) 2 Page - Advanced Power Technology |
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2 / 6 page  APTM10AM02F APT website – http://www.advancedpower.com 2 - 6 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VGS = 0V,VDS = 100V Tj = 25°C 400 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 80V Tj = 125°C 2000 µA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 200A 2.25 2.5 m Ω VGS(th) Gate Threshold Voltage VGS = VDS, ID = 10mA 2 4 V IGSS Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±400 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 40 Coss Output Capacitance 15.7 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 5.9 nF Qg Total gate Charge 1360 Qgs Gate – Source Charge 240 Qgd Gate – Drain Charge VGS = 10V VBus = 50V ID = 400A 720 nC Td(on) Turn-on Delay Time 160 Tr Rise Time 240 Td(off) Turn-off Delay Time 500 Tf Fall Time Inductive switching VGS = 15V VBus = 66V ID = 400A RG = 1.25Ω 160 ns Eon Turn-on Switching Energy 2.2 Eoff Turn-off Switching Energy Inductive switching @ 25°C VGS = 15V, VBus = 66V ID = 400A, RG =1.25Ω 2.41 mJ Eon Turn-on Switching Energy 2.43 Eoff Turn-off Switching Energy Inductive switching @ 125°C VGS = 15V, VBus = 66V ID = 400A, RG = 1.25Ω 2.56 mJ Source - Drain diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tc = 25°C 495 IS Continuous Source current (Body diode) Tc = 80°C 370 A VSD Diode Forward Voltage VGS = 0V, IS = - 400A 1.3 V dv/dt Peak Diode Recovery 5 V/ns Tj = 25°C 190 trr Reverse Recovery Time IS = - 400A VR = 66V diS/dt = 400A/µs Tj = 125°C 370 ns Tj = 25°C 1.6 Qrr Reverse Recovery Charge IS = - 400A VR = 66V diS/dt = 400A/µs Tj = 125°C 6.8 µC Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 495A di/dt ≤ 400A/µs VR ≤ VDSS Tj ≤ 150°C |
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