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APTM08TAM04P датащи(PDF) 2 Page - Advanced Power Technology

номер детали APTM08TAM04P
подробное описание детали  Triple phase leg MOSFET Power Module
PDF  6 Pages
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производитель  ADPOW [Advanced Power Technology]
домашняя страница  http://www.advpowertech.com
Logo ADPOW - Advanced Power Technology

APTM08TAM04P датащи(HTML) 2 Page - Advanced Power Technology

  APTM08TAM04P Datasheet HTML 1Page - Advanced Power Technology APTM08TAM04P Datasheet HTML 2Page - Advanced Power Technology APTM08TAM04P Datasheet HTML 3Page - Advanced Power Technology APTM08TAM04P Datasheet HTML 4Page - Advanced Power Technology APTM08TAM04P Datasheet HTML 5Page - Advanced Power Technology APTM08TAM04P Datasheet HTML 6Page - Advanced Power Technology  
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APTM08TAM04P
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 1mA
75
V
VGS = 0V,VDS = 75V
Tj = 25°C
100
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 60V
Tj = 125°C
250
µA
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 60A
04
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 1mA
2
4
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
4530
Coss
Output Capacitance
1080
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
450
pF
Qg
Total gate Charge
153
Qgs
Gate – Source Charge
25
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 60V
ID =120A
82
nC
Td(on)
Turn-on Delay Time
35
Tr
Rise Time
60
Td(off)
Turn-off Delay Time
100
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 40V
ID = 120A
RG = 5Ω
65
ns
Eon
Turn-on Switching Energy
290
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 40V
ID = 120A, RG = 5Ω
317
µJ
Eon
Turn-on Switching Energy
319
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 40V
ID = 120A, RG = 5Ω
336
µJ
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
120
IS
Continuous Source current
(Body diode)
Tc = 80°C
90
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 120A
1.3
V
dv/dt
Peak Diode Recovery
6
V/ns
trr
Reverse Recovery Time
Tj = 25°C
100
200
ns
Qrr
Reverse Recovery Charge
IS = - 120A
VR = 40V
diS/dt = 100A/µs
Tj = 25°C
300
nC
Eon includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 120A
di/dt
≤ 700A/µs
VR ≤ VDSS
Tj ≤ 150°C



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