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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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APTC60DAM18CTG датащи(PDF) 1 Page - Advanced Power Technology |
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APTC60DAM18CTG датащи(HTML) 1 Page - Advanced Power Technology |
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1 / 7 page  APTC60DAM18CTG APT website – http://www.advancedpower.com 1 – 7 CR1 VBUS NTC2 0/VBU S VBUS SENSE G2 S2 NTC1 Q2 OUT VBUS OUT OUT NTC2 NTC1 0/VBUS S2 S2 G2 G2 VBUS SENSE Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 600 V Tc = 25°C 143 ID Continuous Drain Current Tc = 80°C 107 IDM Pulsed Drain current 572 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 18 m Ω PD Maximum Power Dissipation Tc = 25°C 833 W IAR Avalanche current (repetitive and non repetitive) 20 A EAR Repetitive Avalanche Energy 1 EAS Single Pulse Avalanche Energy 1800 mJ VDSS = 600V RDSon = 18mΩ max @ Tj = 25°C ID = 143A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated • FWD SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS compliant Boost chopper SiC FWD diode Super Junction MOSFET Power Module |
Аналогичный номер детали - APTC60DAM18CTG |
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Аналогичное описание - APTC60DAM18CTG |
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