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TCS40DPR датащи(PDF) 3 Page - Toshiba Semiconductor |
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TCS40DPR датащи(HTML) 3 Page - Toshiba Semiconductor |
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3 / 7 page ![]() TCS40DPR 2015-04-03 3 DC Characteristics (Ta = 25°C) Characteristics Symbol Condition VCC (V) Min Typ. Max Unit Output Voltage High Level VOH IOH = −1.0 mA 2.3 2.0 ― ― V 2.5 2.2 ― ― 3.3 2.9 ― ― 3.6 3.2 ― ― 5.0 4.5 ― ― Low Level VOL IOL = 1.0 mA 2.3 ― ― 0.23 2.5 ― ― 0.25 3.3 ― ― 0.33 3.6 ― ― 0.36 5.0 ― ― 0.50 Supply Current Average Current ICC Current at pulse driving (Note 3, Fig. A) 2.3 ― 7.3 13.2 μA 2.5 ― 8.5 ― 3.3 ― 12.8 ― 5.0 ― 19.0 ― Operating Current ICCON Peak current (Note 3, Fig. A) 2.3 ― 0.7 1.1 mA 2.5 ― 0.8 ― 3.3 ― 1.2 ― 5.0 ― 1.6 ― Operating Frequency fopr (Fig. A) 2.3 to 5.0 ― 25 ― Hz Note 3: Supply current is pulsed periodically by internal circuit. Magnetic Characteristics (Ta = 25°C) Characteristics Symbol Condition (Note 4, Fig. B) VCC (V) Min Typ. Max Unit Magnetic Flux Density, B Operating Point BONS |BONN| When output logic turns High to Low 2.3 to 3.6 3.4 4.4 mT* 5.0 2.8 4.4 Releasing Point BOFFS |BOFFN| When output logic turns Low to High 2.3 to 3.6 0.9 2.0 5.0 0.4 1.5 Hysteresis BH |BON - BOFF| 2.3 to 5.0 1.4 *1 mT = 10 Gauss Note 4: Uniform magnetic field perpendicularly to the magnetic sensor. |
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