MS1336

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

RF & MICROWAVE TRANSISTORS

VHF MOBILE APPLICATIONS

DESCRIPTION:

DESCRIPTION:

The MS1337 is a 12.5 volt epitaxial silicon NPN planar transistor

designed primarily for Class C, VHF communication applications.

The MS1337 utilizes an emitter ballasted die geometry to

withstand severe load mismatch conditions.

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)

Symbol

Parameter

Value

Unit

Collector-Base Voltage

36

V

Collector-Emitter Voltage

18

V

Collector-Emitter Voltage

36

V

Emitter-Base Voltage

4.0

V

Device Current

8.0

A

Power Dissipation

70

W

Junction Temperature

+200

°°C

Storage Temperature

-65 to +150

°°C

Thermal Data

Thermal Data

Junction-case Thermal Resistance

1.2

°°C/W

Features

Features

• 175 MHz

• 12.5 VOLTS

• COMMON EMITTER CONFIGURATION