Figure 1, DRF1200 Simplified Ciruit Diagram

A Simplified DRF1200 Circuit Diagram is illustrated above. By including the driver high speed by-pass capacitors (C1-C8), their

contribution to the internal parasitic loop inductance of the driver output is greatly reduced. This, coupled with the tight geometry of the

hybrid, allows optimal the gate drive to the MOSFET. This low parasitic approach, coupled with the Schmitt trigger input, Kelvin signal

ground and the Anti-Ring Function, Provide improved stability and control in Kilowatt to Multi-Kilowatt, High Frequency applications.

The IN pin is the input for the control signal and is applied to a Schmitt Trigger. The signal is then applied to the intermediate drivers

and level shifters; this section contains proprietary circuitry designed specifically for ring abatement. The P channel and N channel

power drivers provide the high current to the gate of the MOSFET and the MOSFET drain is attached to the OUT pin (9).

Driver Control Logic

In (4) HIGH Driver

Driver Output LOW

MOSFET OFF Drain (9) HIGH

In (4) LOW Driver

Driver Output HIGH

MOSFET ON Drain (9) LOW

The FUNCTION, FN, pin (3) is used to disable the Anti-Ring function. It is recommended that the device be operated with this function

enabled. Func. = Hi (+5V or Float) Anti-Ring on, Func. = Low (0V or GND.) Anti-ring off.

On the Output side are the POWER GROUND connections pin 8 and pin 10. The DRAIN connection is pin 9. It is suggested that

output currents be restricted to these pins by design.

MOSFET Absolute Maxumum Ratings

Thermal Characteristics

Dynamic Characteristics

Test curcuit show on page 3.

All measurements were made with the Anti-Ring circuit activated unless noted.

1. Symmetry is the percent difference in high and low FWHM times with a 50% duty cycle square wave input.

3 10% - 90% See Test Circuit

4 50% - 50%, see Test Circuit

6 Performance specified with this input.

APT reserves the right to change, without notice, the specifications and information contained herein.

Unit

V

A

Ω

Unit

pF

Unit

°C/W

°C

W

Min

Typ

Max

1000

13

0.90

Ratings

0.13

175

>100

1050

Min

Typ

Max

2000

165

75

Parameter

Drain-Source Voltage

Drain-Source On State Resistance

Characteristic

Junction to Case Thermal Resistance

Operating and Storage Junction Temperature

Maximum Power Dissipation

Total Power Dissipation @ T

Parameter

Input Capacitance

Output Resistance

Reverse Transfer Capacitance

Symbol

V

DSS

I

D

R

DS(on)

Symbol

T

J

P

D

P

DC

Symbol

C

iss

C

oss

C

rss

DRF1200