ARF521 datasheet(1/4 Pages) ADPOW

номер детали	ARF521

подробное описание детали	N-CHANNEL ENHANCEMENT MODE POWER MOSFETs

PDF	4 Pages

Scroll/Zoom	100%

производитель	ADPOW [Advanced Power Technology]

домашняя страница	http://www.advpowertech.com

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MAXIMUM RATINGS

All Ratings: T

C = 25°C unless otherwise specified.

RF POWER MOSFET

N - CHANNEL ENHANCEMENT MODE

165V 150W 150MHz

The ARF521 is an RF power transistor designed for high voltage operation in broadband HF, narrow band ISM and MRI

power amplifiers up to 150MHz.

• Specified125Volt,81MHzCharacteristics:

•

Output Power = 150 Watts.

•

Gain = 13dB (Class AB)

•

Efficiency = 50%

• High Voltage Breakdown and Large SOA

for Superior Ruggedness.

• Industry standard package

• Low Vth thermal coefficient

ARF521

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

G

D

S

APT

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

R

DS(ON)

I

DSS

I

GSS

g

fs

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

GS = 0V, ID = 250 µA)

Drain-Source On-State Resistance 1 (I

D(ON) = 5A, VGS = 10V)

Zero Gate Voltage Drain Current (V

DS = VDSS, VGS = 0V)

Zero Gate Voltage Drain Current (V

DS = 50V, VGS = 0, TC = 125°C)

Gate-Source Leakage Current (V

GS = ±30V, VDS = 0V)

Forward Transconductance (V

DS = 15V, ID = 5A)

Gate Threshold Voltage (V

DS = VGS, ID = 200mA)

MIN

TYP

MAX

500

0.56

8

25

250

±100

3

3.6

24

UNIT

Volts

Ohms

µA

nA

mhos

Volts

Symbol

V

DSS

I

D

V

GS

P

D

T

J,TSTG

T

L

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

C = 25°C

Gate-Source Voltage

Total Device Dissipation @ T

C = 25°C

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

ARF521

500

10

±30

250

-55 to 175

300

UNIT

Volts

Amps

Volts

Watts

°C

V

GS(TH)

THERMAL CHARACTERISTICS

Symbol

R

θJC

R

θCS

Characteristic

Junction to Case

Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)

MIN

TYP

MAX

0.60

0.1

UNIT

°C/W

Аналогичный номер детали - ARF521

производитель	номер детали	датащи	подробное описание детали
Microsemi Corporation	ARF521	134Kb / 4P	RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE

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