MAXIMUM RATINGS

All Ratings: T

C

= 25°C unless otherwise specified.

RF POWER MOSFET

N - CHANNEL ENHANCEMENT MODE

165 V 150 W 100 MHz

The ARF520 is an RF power transistor designed for high voltage operation in narrow band ISM and MRI power

amplifiers up to 100 MHz.

•

Output Power = 150 Watts.

•

Gain = 13dB (Class AB)

•

Efficiency = 50%

for Superior Ruggedness.

ARF520

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

G

D

S

APT

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

V

I

DSS

I

GSS

g

fs

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

GS

= 0V, I

D

= 250 µA)

= 5A, V

GS

= 10V)

Zero Gate Voltage Drain Current (V

DS

= V

DSS

, V

GS

= 0V)

Zero Gate Voltage Drain Current (V

DS

= 50V, V

GS

= 0, T

C

= 125°C)

Gate-Source Leakage Current (V

GS

= ±30V, V

DS

= 0V)

Forward Transconductance (V

DS

= 25V, I

D

= 5A)

Gate Threshold Voltage (V

DS

= V

GS

, I

D

= 50mA)

MIN

TYP

MAX

500

4

25

250

±100

46

35

UNIT

Volts

µA

nA

mhos

Volts

Symbol

V

DSS

I

D

V

GS

P

D

T

J

,T

STG

T

L

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

C

= 25°C

Gate-Source Voltage

Total Device Dissipation @ T

C

= 25°C

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

ARF520

500

10

±30

250

-55 to 200

300

UNIT

Volts

Amps

Volts

Watts

°C

V

THERMAL CHARACTERISTICS

Symbol

Characteristic

Junction to Case

MIN

TYP

MAX

0.7

0.1

UNIT

°C/W