DYNAMIC CHARACTERISTICS (per section)

ARF475FL

Symbol

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Test Conditions

V

GS

= 0V

V

DS

= 50V

f = 1MHz

V

GS

= 15V

V

DD

= 250V

I

D

= I

D[Cont.]

@ 25°C

R

G

= 1.6

Ω

MIN

TYP

MAX

780

900

125

150

710

5.1

10

4.1

8

12

18

4.0

7

UNIT

pF

ns

Symbol

G

PS

η

ψ

Test Conditions

f = 128 MHz

Idq = 15mA

V

DD

= 150V

PW = 3ms

10% duty cycle

No Degradation in Output Power

Characteristic

Common Source Amplifier Power Gain

Drain Efficiency

Electrical Ruggedness VSWR 5:1

MIN

TYP

MAX

14

16

50

55

UNIT

dB

%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Figure 2, Typical Capacitance vs. Drain-to-Source Voltage

3000

1000

500

100

50

10

1

.1

1

10

100 200

Ciss

Coss

Crss

Per transistor section unless otherwise specified.

Figure 1, Typical Output Characteristics

0

5

10

15

20

25

30

9V

7V

8V

12V

10V

11V

30

25

20

15

10

5

0

30

25

20

15

10

5

0

024

6

8

10

Figure 3, Typical Transfer Characteristics

VDS> ID (ON) x RDS (ON)MAX.

250 µSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

TJ = -55°C

TJ = -55°C

TJ = +125°C

TJ = +25°C

Figure 4, Typical Threshold Voltage vs Temperature

1.10

1.05

1.00

0.95

0.90

-50

-25

0

25

50

75

100

125

150