DF2S6M4CT

2

5.

5.

5.

5. Example of Circuit Diagram

Example of Circuit Diagram

Example of Circuit Diagram

Example of Circuit Diagram

6.

6.

6.

6. Quick Reference Data

Quick Reference Data

Quick Reference Data

Quick Reference Data

Characteristics

Working peak reverse voltage

Total capacitance

Dynamic resistance

Electrostatic discharge voltage

(IEC61000-4-2) (Contact)

Symbol

VRWM

Ct

RDYN

VESD

Note

(Note 1)

(Note 2)

(Note 3)

Test Condition



VR = 0 V, f = 1 MHz





Min









Typ.



0.35

0.3



Max

5.5

0.5



20

Unit

V

pF

Ω

kV

Note 1: Recommended operating condition.

Note 2: TLP parameters: Z0 = 50 Ω, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of

dynamic resistance using least squares fit of TLP characteristics between IPP1 = 8 A and IPP2 = 16 A.

Note 3: Criterion: No damage to devices.

2018-01-23

Rev.2.0

©2016-2018

Toshiba Electronic Devices & Storage Corporation