DF2S6.8MFS

1

ESD Protection Diodes Silicon Epitaxial Planar

DF2S6.8MFS

DF2S6.8MFS

DF2S6.8MFS

DF2S6.8MFS

Start of commercial production

2014-01

1.

1.

1.

1. Applications

Applications

Applications

Applications

•

ESD Protection

Note:

This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other

purpose, including, but not limited to, voltage regulation.

2.

2.

2.

2. Packaging and Internal Circuit

Packaging and Internal Circuit

Packaging and Internal Circuit

Packaging and Internal Circuit

SOD-923

1: Cathode

2: Anode

3.

3.

3.

3. Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, Taaaa = 25

= 25

= 25

= 25





))))

Characteristics

Electrostatic discharge voltage (IEC61000-4-2)(Contact)

Electrostatic discharge voltage(IEC61000-4-2)(Air)

Peak pulse power

Peak pulse current

Junction temperature

Storage temperature

Symbol

VESD

VESD

PPK

IPP

Tj

Tstg

Rating

±12

±15

45

3

150

-55 to 150

Unit

kV

kV

W

A





Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2016-11-14

Rev.6.0

©2016 Toshiba Corporation