DF2S23P2FU

1

ESD Protection Diodes Silicon Epitaxial Planar

DF2S23P2FU

DF2S23P2FU

DF2S23P2FU

DF2S23P2FU

Start of commercial production

2018-08

1.

1.

1.

1. General

General

General

General

The DF2S23P2FU is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device

interfaces and other applications to protect against static electricity and noise.

The DF2S23P2FU has realized high IPP, in order to protect a semiconductor devices from the indirect lightning

stroke and the transition voltage (at the time of power activation).

Furthermore, the DF2S23P2FU is housed in an standard package (2.5 mm × 1.25 mm), it can be used for various

applications.

2.

2.

2.

2. Applications

Applications

Applications

Applications

Mobile Equipment

 Smartphones

 Tablets

 Notebook PCs

Desktop PCs

Note:

This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other

purpose, including, but not limited to, voltage regulation.

3.

3.

3.

3. Features

Features

Features

Features

(1)

Suitable for use with a 20 V signal line. (VRWM ≤ 21 V)

(2)

Protects devices with its high ESD performance.

(VESD = ±30 kV (Contact / Air) @IEC61000-4-2)

(3)

Low dynamic resistance protects semiconductor devices from static electricity and noise.

(RDYN = 0.13 Ω (typ.))

(4)

Low clamping voltage characteristic protects semiconductor devices from static electricity and noise.

(VC = 30 V@IPP = 14 A (typ.))

(5)

Compact package is suitable for use in high density board layouts such as in mobile devices.

(2.5 mm × 1.25 mm size (Nickname: USC))

4.

4.

4.

4. Packaging

Packaging

Packaging

Packaging

USC

2018-08-07

Rev.2.0

©2017-2018

Toshiba Electronic Devices & Storage Corporation