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DF2S16CT датащи(PDF) 2 Page - Toshiba Semiconductor |
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DF2S16CT датащи(HTML) 2 Page - Toshiba Semiconductor |
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2 / 6 page ![]() DF2S16CT 2 4. 4. 4. 4. Electrical Characteristics (Unless otherwise specified, T Electrical Characteristics (Unless otherwise specified, T Electrical Characteristics (Unless otherwise specified, T Electrical Characteristics (Unless otherwise specified, Taaaa = 25 = 25 = 25 = 25 )))) VRWM: Working peak reverse voltage VBR: Reverse breakdown voltage IBR: Reverse breakdown current IR: Reverse current VC: Clamp voltage IPP: Peak pulse current RDYN: Dynamic resistance Fig. Fig. Fig. Fig. 4.1 4.1 4.1 4.1 Definitions of Electrical Characteristics Definitions of Electrical Characteristics Definitions of Electrical Characteristics Definitions of Electrical Characteristics Characteristics Zener voltage Dynamic impedance Reverse current Total capacitance Symbol VZ ZZ IR Ct Note Test Condition IZ = 5 mA IZ = 5 mA VR = 12 V VR = 0 V, f = 1 MHz Min 15.3 Typ. 10 Max 17.1 35 0.5 Unit V Ω µA pF 5. 5. 5. 5. Guaranteed ESD Protection (Note) Guaranteed ESD Protection (Note) Guaranteed ESD Protection (Note) Guaranteed ESD Protection (Note) Test Condition IEC61000-4-2 (Contact discharge) ESD Protection ±12 kV Note: Criterion: No damage to devices. 2014-04-14 Rev.4.0 |
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