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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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APTGS25X120RTP2 датащи(PDF) 3 Page - Advanced Power Technology |
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APTGS25X120RTP2 датащи(HTML) 3 Page - Advanced Power Technology |
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3 / 4 page  APTGS25X120RTP2 APTGS25X120BTP2 APT website – http://www.advancedpower.com 3 - 4 IGBT & Diode Inverter Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit BVCES Collector - Emitter Breakdown Voltage VGE = 0V, IC = 500µA 1200 V Tj = 25°C 1.5 500 µA ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 1200V Tj = 125°C 2 mA Tj = 25°C 2.1 2.55 VCE(on) Collector Emitter on Voltage VGE =15V IC = 25A Tj = 125°C 2.45 V VGE(th) Gate Threshold Voltage VGE = VCE , IC = 1mA 4.5 5.5 6.5 V IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 300 nA Cies Input Capacitance VGE = 0V, VCE = 25V f = 1MHz 1500 pF Td(on) Turn-on Delay Time 45 Tr Rise Time 45 Td(off) Turn-off Delay Time 290 Tf Fall Time Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 25A RG = 27Ω 60 ns Td(on) Turn-on Delay Time 45 Tr Rise Time 45 Td(off) Turn-off Delay Time 340 Tf Fall Time 80 ns Eoff Turn off Energy Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 25A RG = 27Ω 3.2 mJ Tj = 25°C 2.05 2.5 VF Forward Voltage VGE = 0V IF = 25A Tj = 125°C 1.9 V Tj = 25°C 2.1 Qrr Reverse Recovery Charge IF = 25A VR = 600V di/dt=800A/µs Tj = 125°C 4.5 µC IGBT 0.55 RthJC Junction to Case Diode 1.2 °C/W Temperature sensor NTC Symbol Characteristic Min Typ Max Unit R25 Resistance @ 25°C 5 k Ω B 25/50 T25 = 298.16 K 3375 K − = T T B R R T 1 1 exp 25 50 / 25 25 3. Thermal and package characteristics Symbol Characteristic Min Typ Max Unit VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 125 °C Torque Mounting torque To Heatsink M5 3.3 N.m Wt Package Weight 185 g T: Thermistor temperature RT: Thermistor value at T |
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