DF2B7AFS

4

6. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �)

Characteristics

Electrostatic discharge voltage (IEC61000-4-2) (Contact)

Electrostatic discharge voltage (IEC61000-4-2) (Air)

Peak pulse power (tp = 8/20 µs)

Peak pulse current (tp = 8/20 µs)

Junction temperature

Storage temperature

Symbol

VESD

PPK

IPP

Tj

Tstg

Note

(Note 1)

(Note 2)

Rating

±30

±30

80

4

150

-55 to 150

Unit

kV

kV

W

A

�

�

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: According to IEC61000-4-2.

Note 2: According to IEC61000-4-5.

7. Electrical Characteristics (Unless otherwise specified, Ta = 25 �)

VRWM: Working peak reverse voltage

VBR: Reverse breakdown voltage

IBR: Reverse breakdown current

IR: Reverse current

VC: Clamp voltage

IPP: Peak pulse current

RDYN: Dynamic resistance

Fig. 7.1

Definitions of Electrical Characteristics

Characteristics

Working peak reverse voltage

Total capacitance

Dynamic resistance

Reverse breakdown voltage

Reverse current

Clamp voltage

Symbol

VRWM

Ct

RDYN

VBR

IR

VC

Note

(Note 1)

(Note 2)

(Note 3)

(Note 2)

Test Condition

�

VR = 0 V, f = 1 MHz

�

IBR = 1 mA

VRWM = 5.5 V

IPP = 1 A

IPP = 4 A

ITLP = 16 A

ITLP = 30 A

Min

�

�

�

5.8

�

�

�

�

�

Typ.

�

8.5

0.2

6.8

�

8

11

12

15

Max

5.5

10

�

7.8

100

�

20

�

�

Unit

V

pF

Ω

V

nA

V

Note 1: Recommended operating condition.

Note 2: TLP parameters: Z0 = 50 Ω, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of

dynamic resistance using least squares fit of TLP characteristics between IPP1 = 8 A and IPP2 = 16 A.

Note 3: Based on IEC61000-4-5 8/20 µs pulse.

2022-08-22

Rev.3.0

©2016-2022

Toshiba Electronic Devices & Storage Corporation