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DF2B5M5SL датащи(PDF) 5 Page - Toshiba Semiconductor |
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DF2B5M5SL датащи(HTML) 5 Page - Toshiba Semiconductor |
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5 / 9 page ![]() DF2B5M5SL 5 8. 8. 8. 8. Electrical Characteristics (Unless otherwise specified, T Electrical Characteristics (Unless otherwise specified, T Electrical Characteristics (Unless otherwise specified, T Electrical Characteristics (Unless otherwise specified, Taaaa = 25 = 25 = 25 = 25 )))) VRWM: Working peak reverse voltage VT: Trigger voltage VH: Holding voltage (Reverse breakdown voltage) It1: Test current (Reverse breakdown current) IR: Reverse current VC: Clamp voltage IPP: Peak pulse current RDYN: Dynamic resistance Fig. Fig. Fig. Fig. 8.1 8.1 8.1 8.1 Definitions of Electrical Characteristics Definitions of Electrical Characteristics Definitions of Electrical Characteristics Definitions of Electrical Characteristics Characteristics Working peak reverse voltage Total capacitance Dynamic resistance First peak voltage Trigger voltage Holding voltage Reverse current Clamp voltage Symbol VRWM Ct RDYN Vpeak VT VH IR VC VC Note (Note 1) (Note 2) (Note 3) (Note 4) (Note 2) Test Condition VR = 0 V, f = 1 MHz It1 = 5 mA VRWM = 3.3 V IPP = 1 A IPP = 2.5 A ITLP = 4 A ITLP = 16 A ITLP = 30 A Min 3.6 3.6 Typ. 0.3 0.5 67 4.8 7 9.2 9.6 17 25 Max 3.3 0.45 6.0 0.1 15 Unit V pF Ω V V V µA V V Note 1: Recommended operating condition. Note 2: TLP parameters: Z0 = 50 Ω, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP characteristics between IPP1 = 16 A and IPP2 = 30 A. Note 3: According to IEC61000-4-2 (contact), test voltage V = ±8 kV Note 4: Based on IEC61000-4-5 8/20 µs pulse. 2018-03-12 Rev.1.0 ©2018 Toshiba Electronic Devices & Storage Corporation |
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