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DF2B12M4SL датащи(PDF) 3 Page - Toshiba Semiconductor

номер детали DF2B12M4SL
подробное описание детали  ESD Protection Diodes Silicon Epitaxial Planar
PDF  8 Pages
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

DF2B12M4SL датащи(HTML) 3 Page - Toshiba Semiconductor

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DF2B12M4SL
3
6.2.
6.2.
6.2.
6.2. Clamp Voltage - Peak Pulse Current (V
Clamp Voltage - Peak Pulse Current (V
Clamp Voltage - Peak Pulse Current (V
Clamp Voltage - Peak Pulse Current (VC
C
C
C
- I
- I
- I
- IPP
PP
PP
PP
) (Note)
) (Note)
) (Note)
) (Note)
Fig.
Fig.
Fig.
Fig. 6.2.1
6.2.1
6.2.1
6.2.1 V
V
V
VC
C
C
C
- I
- I
- I
- IPP
PP
PP
PP
Fig.
Fig.
Fig.
Fig. 6.2.2
6.2.2
6.2.2
6.2.2 Based on IEC61000-4-5 8/20
Based on IEC61000-4-5 8/20
Based on IEC61000-4-5 8/20
Based on IEC61000-4-5 8/20 µ
µ
µ
µs pulse.
s pulse.
s pulse.
s pulse.
Note:
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
7.
7.
7.
7. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, Taaaa = 25
= 25
= 25
= 25 
))))
Characteristics
Electrostatic discharge voltage (IEC61000-4-2) (Contact)
Electrostatic discharge voltage (IEC61000-4-2) (Air)
Peak pulse power (tp = 8/20 µs)
Peak pulse current (tp = 8/20 µs)
Junction temperature
Storage temperature
Symbol
VESD
PPK
IPP
Tj
Tstg
Note
(Note 1)
(Note 2)
Rating
±15
±15
22
1
150
-55 to 150
Unit
kV
W
A
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: According to IEC61000-4-2.
Note 2: According to IEC61000-4-5.
2018-03-28
Rev.2.0
©2018
Toshiba Electronic Devices & Storage Corporation



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