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DF2B12M4SL датащи(PDF) 3 Page - Toshiba Semiconductor |
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DF2B12M4SL датащи(HTML) 3 Page - Toshiba Semiconductor |
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3 / 8 page ![]() DF2B12M4SL 3 6.2. 6.2. 6.2. 6.2. Clamp Voltage - Peak Pulse Current (V Clamp Voltage - Peak Pulse Current (V Clamp Voltage - Peak Pulse Current (V Clamp Voltage - Peak Pulse Current (VC C C C - I - I - I - IPP PP PP PP ) (Note) ) (Note) ) (Note) ) (Note) Fig. Fig. Fig. Fig. 6.2.1 6.2.1 6.2.1 6.2.1 V V V VC C C C - I - I - I - IPP PP PP PP Fig. Fig. Fig. Fig. 6.2.2 6.2.2 6.2.2 6.2.2 Based on IEC61000-4-5 8/20 Based on IEC61000-4-5 8/20 Based on IEC61000-4-5 8/20 Based on IEC61000-4-5 8/20 µ µ µ µs pulse. s pulse. s pulse. s pulse. Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 7. 7. 7. 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, T Absolute Maximum Ratings (Note) (Unless otherwise specified, T Absolute Maximum Ratings (Note) (Unless otherwise specified, T Absolute Maximum Ratings (Note) (Unless otherwise specified, Taaaa = 25 = 25 = 25 = 25 )))) Characteristics Electrostatic discharge voltage (IEC61000-4-2) (Contact) Electrostatic discharge voltage (IEC61000-4-2) (Air) Peak pulse power (tp = 8/20 µs) Peak pulse current (tp = 8/20 µs) Junction temperature Storage temperature Symbol VESD PPK IPP Tj Tstg Note (Note 1) (Note 2) Rating ±15 ±15 22 1 150 -55 to 150 Unit kV W A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: According to IEC61000-4-2. Note 2: According to IEC61000-4-5. 2018-03-28 Rev.2.0 ©2018 Toshiba Electronic Devices & Storage Corporation |
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