APT65GP60JDQ2

TYPICAL PERFORMANCE CURVES

MAXIMUM RATINGS

All Ratings: T

STATIC ELECTRICAL CHARACTERISTICS

Characteristic / Test Conditions

Collector-Emitter Breakdown Voltage (V

Gate Threshold Voltage (V

Collector-Emitter On Voltage (V

Collector-Emitter On Voltage (V

Collector Cut-off Current (V

2

Collector Cut-off Current (V

2

Gate-Emitter Leakage Current (V

Symbol

V

(BR)CES

V

GE(TH)

V

CE(ON)

I

CES

I

GES

Units

Volts

µA

nA

Symbol

V

CES

V

GE

I

C1

I

C2

I

CM

SSOA

P

D

T

T

L

APT65GP60JDQ2

600

±30

130

60

250

250A @ 600V

431

-55 to 150

300

UNIT

Volts

Amps

Watts

°C

Parameter

Collector-Emitter Voltage

Gate-Emitter Voltage

Continuous Collector Current @ T

Continuous Collector Current @ T

Switching Safe Operating Area @ T

Total Power Dissipation

Operating and Storage Junction Temperature Range

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

APT Website - http://www.advancedpower.com

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

MIN

TYP

MAX

600

3

4.5

6

2.2

2.7

2.1

1250

5500

±100

Through Technology this IGBT is ideal for many high frequency, high voltage switching

applications and has been optimized for high frequency switchmode power supplies.

• Low Conduction Loss

• 100 kHz operation @ 400V, 33A

• Low Gate Charge

• 50 kHz operation @ 400V, 47A

• Ultrafast Tail Current shutoff

• SSOA Rated

®

C

E

G

600V

APT65GP60JDQ2

SO

T-2

27

file # E145592

"UL Recognized"

G

E

E

C