APT40N60JCU2

APT website – http://www.advancedpower.com

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Diode ratings and characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

1.6

1.8

1.9

Diode Forward Voltage

1.4

V

250

Maximum Reverse Leakage Current

500

µA

Junction Capacitance

44

pF

Reverse Recovery Time

di/dt =100A/µs

23

85

Reverse Recovery Time

160

ns

4

Maximum Reverse Recovery Current

8

A

130

Reverse Recovery Charge

di/dt =200A/µs

700

nC

Reverse Recovery Time

70

ns

Reverse Recovery Charge

1300

nC

Maximum Reverse Recovery Current

di/dt =1000A/µs

30

A

Thermal and package characteristics

Symbol Characteristic

Min

Typ

Max

Unit

CoolMos

0.43

Junction to Case

Diode

1.21

Junction to Ambient (IGBT & Diode)

20

°C/W

RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz

2500

V

-55

150

Max Lead Temp for Soldering:0.063” from case for 10 sec

300

°C

1.5

N.m

Wt

Package Weight

29.2

g

Typical CoolMOS Performance Curve

Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

0.45

0.5

0.00001

0.0001

0.001

0.01

0.1

1

10

Rectangular Pulse Duration (Seconds)

Fig 1, Maximum Effective transient thermal Impedance, Junction to case vs Pulse Duration