DYNAMIC CHARACTERISTICS

APT20N60BCF(G)_SCF(G)

SINGLE PULSE

1.0

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

0.70

0.60

0.50

0.40

0.30

0.20

0.10

0

0.5

0.1

0.3

0.7

0.9

0.05

FINAL DATA SHEET WITH MOS 7 FORMAT

Peak TJ = PDM x ZθJC + TC

Duty Factor D =

t2

t1

Note:

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

THERMAL CHARACTERISTICS

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

dt

5

Reverse Recovery Time

(I

Reverse Recovery Charge

(I

Peak Recovery Current

(I

Symbol

I

S

I

SM

V

SD

dt

t

rr

Q

rr

I

RRM

UNIT

Amps

Volts

V/ns

ns

µC

Amps

MIN

TYP

MAX

20

60

1.2

40

180

260

1.4

2.5

15

18

Symbol

MIN

TYP

MAX

0.60

62

UNIT

°C/W

Characteristic

Junction to Case

Junction to Ambient

1 Repetitive Rating: Pulse width limited by maximum junction

temperature

2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

3 See MIL-STD-750 Method 3471

APT Reserves the right to change, without notice, the specifications and information contained herein.

T

T

T

T

T

T

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

on

E

off

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Turn-off Switching Energy

Turn-off Switching Energy

Test Conditions

V

V

f = 1 MHz

V

V

I

RESISTIVE SWITCHING

V

V

I

R

INDUCTIVE SWITCHING @ 25°C

V

I

INDUCTIVE SWITCHING @ 125°C

V

I

4 Starting T

/

6 Eon includes diode reverse recovery. See figures 18, 20.

7 Repetitive avalanche causes additional power losses that can be calcu-

lated as

MIN

TYP

MAX

2520

670

40

95

18

55

12

15

60

6.4

180

60

315

80

UNIT

pF

nC

ns