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APT15GP90K датащи(PDF) 3 Page - Advanced Power Technology

номер детали APT15GP90K
подробное описание детали  POWER MOS 7 IGBT
PDF  6 Pages
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производитель  ADPOW [Advanced Power Technology]
домашняя страница  http://www.advpowertech.com
Logo ADPOW - Advanced Power Technology

APT15GP90K датащи(HTML) 3 Page - Advanced Power Technology

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APT15GP90K(G)
TYPICAL PERFORMANCE CURVES
V
CE = 720V
IC = 15A
TJ = 25°C
250µs PULSE
TEST<0.5 % DUTY
CYCLE
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
6
5
4
3
2
1
0
1.10
1.05
1.00
0.95
0.90
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
2
4
6
8
10
12
14
0
10
20
30
40
50
60
70
6
8
10
12
14
16
-50
-25
0
25
50
75
100 125
-50
-25
0
25
50
75
100 125
-50 -25
0
25
50
75 100 125 150
50
40
30
20
10
0
16
14
12
10
8
6
4
2
0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
60
50
40
30
20
10
0
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(TJ = 25°C)
FIGURE 2, Output Characteristics (TJ = 125°C)
V
GE, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
VGE, GATE-TO-EMITTER VOLTAGE (V)
TJ, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
TJ, JUNCTION TEMPERATURE (°C)
TC, CASE TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
T
J = 125°C
T
J = 25°C
T
J = -55°C
T
J = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
I
C = 30A
I
C = 15A
I
C = 7.5A
V
GE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
I
C = 30A
I
C = 15A
I
C = 7.5A
T
J = 125°C
T
J = 25°C
VGE = 15V
T
J = 125°C
T
J = 25°C
V
CE = 450V
V
CE = 180V
VGE = 10V



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