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APT11GP60SA датащи(PDF) 4 Page - Advanced Power Technology

номер детали APT11GP60SA
подробное описание детали  POWER MOS 7 IGBT
PDF  6 Pages
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производитель  ADPOW [Advanced Power Technology]
домашняя страница  http://www.advpowertech.com
Logo ADPOW - Advanced Power Technology

APT11GP60SA датащи(HTML) 4 Page - Advanced Power Technology

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APT11GP60K_SA
VCE = 400V
RG= 5Ω
L = 100 µH
V
GE =15V,TJ=125°C
VGE= 15V
V
GE =15V,TJ=25°C
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G, GATE RESISTANCE (OHMS)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
T
J = 25 or 125°C,VGE = 15V
TJ=125°C,VGE=15V
TJ= 25°C, VGE=15V
VCE = 400V
TJ = 25°C, TJ =125°C
RG= 5Ω
L = 100 µH
5
10
15
20
25
5
10
15
20
25
5
10
15
20
25
30
35
5
10
15
20
25
5
10
15
20
25
5
10
15
20
25
0
10
20
30
40
50
0
25
50
75
100
125
10
8
6
4
2
0
16
14
12
10
8
6
4
2
0
500
400
300
200
100
0
600
500
400
300
200
100
0
R
G = 5Ω, L = 100
µ
H, VCE = 400V
70
60
50
40
30
20
10
0
120
100
80
60
40
20
0
600
500
400
300
200
100
0
600
500
400
300
200
100
0
VCE = 400V
L = 100 µH
RG = 5Ω
VCE = 400V
L = 100 µH
RG = 5Ω
VCE = 400V
VGE = +15V
T
J = 125°C
Eon25.5A
Eoff11A
Eon211A
Eon222A
Eoff22A
Eoff5.5A
VCE = 400V
VGE = +15V
RG = 5Ω
Eon25.5A
Eoff11A
Eon211A
Eon222A
Eoff22A
Eoff5.5A
R
G = 5Ω, L = 100
µ
H, VCE = 400V
T
J = 125°C, VGE = 5V
T
J = 25°C, VGE = 15V
T
J = 25°C, VGE = 15V
T
J = 125°C, VGE = 15V



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