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STU1255PL датащи(PDF) 2 Page - SamHop Microelectronics Corp.

номер детали STU1255PL
подробное описание детали  P-Channel E nhancement Mode Field Effect Transistor
PDF  8 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STU1255PL датащи(HTML) 2 Page - SamHop Microelectronics Corp.

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E LE CTR ICAL CHAR ACTE R IS TICS (TA 25 C unless otherwise noted)
=
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHAR ACTER ISTICS
Drain-Source Breakdown Voltage
BVDSS
=
VGS 0V, ID -250uA
=
-55
V
Zero Gate Voltage Drain Current
IDSS
VDS -44V, VGS 0V
=
=
-1
uA
Gate-Body Leakage
IGSS
VGS 20V, VDS 0V
=
=
100
nA
ON CHAR ACTER ISTICS b
Gate Threshold Voltage
VGS(th)
VDS VGS, ID = -250uA
=
-1.3
-2.5
V
Drain-Source On-State R esistance
R DS(ON)
VGS -10V, ID -10A
VGS -4.5V, ID -6A
On-State Drain Current
ID(ON)
VDS = -5V, VGS = -10V
A
S
Forward Transconductance
FS
g
VDS -15V, ID -10A
DYNAMIC CHAR ACTER ISTICS
c
Input Capacitance
CISS
CRSS
COSS
Output Capacitance
R everse Transfer Capacitance
VDS =-30V, VGS = 0V
f =1.0MHZ
P
F
P
F
P
F
SWITCHING CHAR ACTER ISTICS
c
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
tD(ON)
tr
tD(OFF)
tf
VD = -30V,
ID = -1A,
VGEN = - 10V,
R GEN = 6 ohm
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS =-30V, ID = -5A,
VGS =-10V
nC
nC
nC
C
Fall Time
=
=
=
=
=
=
5
2
m-ohm
m-ohm
110
145
nC
VDS =-30V,ID =-5A,VGS =-10V
VDS =-30V,ID =-5A,VGS =-4.5V
S T U/D1255P L
30
12
770
80
55
12.3
8.8
51.5
23.1
13.7
6.8
2.5
2.8
885
94
65
14
10
60
26
16
8
3
3.3
-1.8
120
95



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