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AP4569GD датащи(PDF) 4 Page - Advanced Power Electronics Corp.

номер детали AP4569GD
подробное описание детали  N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  7 Pages
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производитель  A-POWER [Advanced Power Electronics Corp.]
домашняя страница  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP4569GD датащи(HTML) 4 Page - Advanced Power Electronics Corp.

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N-Channel
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
4/7
AP4569GD
0
10
20
30
0246
V DS , Drain-to-Source Voltage (V)
T A =25
o C
10V
7.0V
5.0V
4.5V
V G =3.0V
0
10
20
30
02
46
V DS , Drain-to-Source Voltage (V)
T A = 150
o C
10V
7.0V
5.0V
4.5V
V G =3.0V
25
55
85
115
145
24
68
10
V GS , Gate-to-Source Voltage (V)
I D =2A
T A =25
o C
0.6
1.0
1.4
1.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
I D =4A
V G =10V
0
2
4
6
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
T j =25
o C
T j =150
o C
0.3
0.7
1.1
1.5
-50
0
50
100
150
T j , Junction Temperature (
o C)



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