VS-VSK.230..PbF Series

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Vishay Semiconductors

Revision: 12-Nov-2018

2

Document Number: 93053

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ON-STATE CONDUCTION

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average on-state current



at case temperature

IT(AV)

180° conduction, half sine wave

230

A

85

°C

Maximum RMS on-state current

IT(RMS)

As AC switch

510

A

Maximum peak, one-cycle on-state



non-repetitive, surge current

ITSM

t = 10 ms

No voltage



reapplied

Sinusoidal



half wave,



initial



TJ = TJ maximum

7500

t = 8.3 ms

7850

t = 10 ms

100 % VRRM

reapplied

6300

t = 8.3 ms

6600

Maximum I2t for fusing

I2t

t = 10 ms

No voltage



reapplied

280

kA2s

t = 8.3 ms

256

t = 10 ms

100 % VRRM

reapplied

198

t = 8.3 ms

181

Maximum I2

t for fusing

I2

t

t = 0.1 ms to 10 ms, no voltage reapplied

2800

kA2

s

Low level value or threshold voltage

VT(TO)1

(16.7 % x

 x I

T(AV) < I <  x IT(AV)), TJ = TJ maximum

1.03

V

High level value of threshold voltage

VT(TO)2

(I >

 x I

T(AV)), TJ = TJ maximum

1.07

Low level value on-state slope resistance

rt1

(16.7 % x

 x I

T(AV) < I <  x IT(AV)), TJ = TJ maximum

0.77

m



High level value on-state slope resistance

rt2

(I >

 x I

T(AV)), TJ = TJ maximum

0.73

Maximum on-state voltage drop

VTM

ITM =  x IT(AV), TJ = TJ maximum, 180° conduction,

average power = VT(TO) x IT(AV) + rf x (IT(RMS))2

1.59

V

Maximum holding current

IH

Anode supply = 12 V, initial IT = 30 A, TJ = 25 °C

500

mA

Maximum latching current

IL

Anode supply = 12 V, resistive load = 1

,

gate pulse: 10 V, 100 μs, TJ = 25 °C

1000

SWITCHING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Typical delay time

td

TJ = 25 °C, gate current = 1 A dIg/dt = 1 A/μs,

Vd = 0.67 % VDRM

1.0

μs

Typical rise time

tr

2.0

Typical turn-off time

tq

ITM = 300 A; dI/dt = 15 A/μs; TJ = TJ maximum;

VR = 50 V; dV/dt = 20 V/μs; gate 0 V, 100 

50 to 150

BLOCKING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum peak reverse and



off-state leakage current

IRRM,

IDRM

TJ = TJ maximum

50

mA

RMS insulation voltage

VINS

50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s

3000

V

Critical rate of rise of off-state voltage

dV/dt

TJ = TJ maximum, exponential to 67 % rated VDRM

1000

V/μs

TRIGGERING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum peak gate power

PGM

tp  5 ms, TJ = TJ maximum

10.0

W

Maximum average gate power

PG(AV)

f = 50 Hz, TJ = TJ maximum

2.0

Maximum peak gate current

+ IGM

tp  5 ms, TJ = TJ maximum

3.0

A

Maximum peak negative gate voltage

- VGT

tp  5 ms, TJ = TJ maximum

5.0

V

Maximum required DC gate voltage to trigger

VGT

TJ = -40 °C

Anode supply = 12 V,



resistive load; Ra = 1



4.0

TJ = 25 °C

3.0

TJ = TJ maximum

2.0

Maximum required DC gate current to trigger

IGT

TJ = - 40 °C

Anode supply = 12 V,



resistive load; Ra = 1



350

mA

TJ = 25 °C

200

TJ = TJ maximum

100

Maximum gate voltage that will not trigger

VGD

TJ = TJ maximum, rated VDRM applied

0.25

V

Maximum gate current that will not trigger

IGD

TJ = TJ maximum, rated VDRM applied

10.0

mA

Maximum rate of rise of turned-on current

dI/dt

TJ = TJ maximum, ITM = 400 A, rated VDRM applied

500

A/μs