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TCR2EE датащи(PDF) 2 Page - Toshiba Semiconductor |
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TCR2EE датащи(HTML) 2 Page - Toshiba Semiconductor |
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2 / 17 page ![]() TCR2EF series, TCR2EE series 2019-06-20 2 © 2017-2019 Toshiba Electronic Devices & Storage Corporation Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Input voltage VIN 6.0 V Control voltage VCT -0.3 to 6.0 V Output voltage VOUT -0.3 to VIN + 0.3 V Power dissipation PD SMV 200 (Note 1) mW 580 (Note 2) ESV 150 (Note 1) 320 (Note 3) Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Unit Rating Note 2: Rating at mounting on a board (FR4 board dimension: 25.4 mm × 25.4 mm × 1.6 mm) Note 3: Rating at mounting on a board (FR4 board dimension: 30 mm × 30 mm × 0.8 mm) Operating Ranges Note 4: IOUT = 1 mA. Please refer to Dropout voltage (Page 5) and use it within Absolute Maximum Ratings Junction temperature and Operation Temperature Ranges. Note 5: Do not operate at or near the maximum ratings of operating ranges for extended periods of time. Exposure to such conditions may adversely impact product reliability and results in failures not covered by warranty. Characteristics Symbol Rating Unit Input voltage VIN 1.5 to 5.5 V (Note 4) V Control voltage VCT 0 to 5.5 V Output voltage VOUT 1.0 to 5.0 V Output current IOUT DC 200 (Note 5) mA Operation Temperature Topr -40 to 85 °C Output Capacitance COUT ≥1.0μF ― Input Capacitance CIN ≥0.1μF ― |
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