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STM32L151C6U6ADTR датащи(PDF) 80 Page - STMicroelectronics

номер детали STM32L151C6U6ADTR
подробное описание детали  Ultra-low-power 32-bit MCU ARM®-based Cortex®-M3,128KB Flash, 32KB SRAM, 4KB EEPROM, LCD, USB, ADC, DAC
PDF  129 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32L151C6U6ADTR датащи(HTML) 80 Page - STMicroelectronics

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Electrical characteristics
STM32L151x6/8/B-A STM32L152x6/8/B-A
80/129
DocID024330 Rev 4
6.3.9
Memory characteristics
The characteristics are given at TA = -40 to 105 °C unless otherwise specified.
RAM memory
Flash memory and data EEPROM
Table 35. RAM and hardware registers
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRM
Data retention mode(1)
1. Minimum supply voltage without losing data stored in RAM (in Stop mode or under Reset) or in hardware
registers (only in Stop mode).
STOP mode (or RESET)
1.65
-
-
V
Table 36. Flash memory and data EEPROM characteristics
Symbol
Parameter
Conditions
Min
Typ
Max(1)
1. Guaranteed by design.
Unit
VDD
Operating voltage
Read / Write / Erase
-1.65
-
3.6
V
tprog
Programming / erasing time for
byte / word / double word / half-
page
Erasing
-
3.28
3.94
ms
Programming
-
3.28
3.94
IDD
Average current during whole
program/erase operation
TA = 25 °C, VDD = 3.6 V
-300
-
µA
Maximum current (peak) during
program/erase operation
-1.5
2.5
mA
Table 37. Flash memory, data EEPROM endurance and data retention
Symbol
Parameter
Conditions
Value
Unit
Min(1)
1. Guaranteed by characterization results.
Typ Max
NCYC(2)
Cycling (erase / write)
Program memory
TA = -40°C to
105 °C
10
--
kcycles
Cycling (erase / write)
EEPROM data memory
300
-
-
tRET(2)
2. Characterization is done according to JEDEC JESD22-A117.
Data retention (program memory) after
10 kcycles at TA = 85 °C
TRET = +85 °C
30
-
-
years
Data retention (EEPROM data memory)
after 300 kcycles at TA = 85 °C
30
-
-
Data retention (program memory) after
10 kcycles at TA = 105 °C
TRET = +105 °C
10
-
-
Data retention (EEPROM data memory)
after 300 kcycles at TA = 105 °C
10
-
-



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