STM32G081CB datasheet(69/136 Pages) STMICROELECTRONICS

69 / 136 page

DS12231 Rev 4

69/136

STM32G081xB

Electrical characteristics

108

tWUSTOP0

Wakeup time from

Stop 0

Transiting to Run-mode execution in Flash memory not

powered in Stop 0 mode;

HCLK = HSI16 = 16 MHz;

Regulator in Range 1 or Range 2

5.6

µs

Transiting to Run-mode execution in SRAM or in Flash

memory powered in Stop 0 mode;

HCLK = HSI16 = 16 MHz;

Regulator in Range 1 or Range 2

22.4

tWUSTOP1

Wakeup time from

Stop 1

Transiting to Run-mode execution in Flash memory not

powered in Stop 1 mode;

HCLK = HSI16 = 16 MHz;

Regulator in Range 1 or Range 2

9.0

11.2

µs

Transiting to Run-mode execution in SRAM or in Flash

memory powered in Stop 1 mode;

HCLK = HSI16 = 16 MHz;

Regulator in Range 1 or Range 2

57.5

Transiting to Low-power-run-mode execution in Flash

memory not powered in Stop 1 mode;

HCLK = HSI16/8 = 2 MHz;

Regulator in low-power mode (LPR = 1 in PWR_CR1)

25.3

Transiting to Low-power-run-mode execution in SRAM or

in Flash memory powered in Stop 1 mode;

HCLK = HSI16 / 8 = 2 MHz;

Regulator in low-power mode (LPR = 1 in PWR_CR1)

23.5

tWUSTBY

Wakeup time from

Standby mode

Transiting to Run mode;

HCLK = HSI16 = 16 MHz;

Regulator in Range 1

14.5

µs

tWUSHDN

Wakeup time from

Shutdown mode

Transiting to Run mode;

HCLK = HSI16 = 16 MHz;

Regulator in Range 1

258

340

µs

tWULPRUN

Wakeup time from

Low-power run

mode(2)

Transiting to Run mode;

HSISYS = HSI16/8 = 2 MHz

µs

1. Based on characterization results, not tested in production.

2. Time until REGLPF flag is cleared in PWR_SR2.

Table 34. Low-power mode wakeup times(1) (continued)

Symbol

Parameter

Conditions

Typ

Max

Unit

Table 35. Regulator mode transition times(1)

Symbol

Parameter

Conditions

Typ

Max

Unit

tVOST

Transition times between regulator

Range 1 and Range 2(2)

HSISYS = HSI16

µs

1. Based on characterization results, not tested in production.

2. Time until VOSF flag is cleared in PWR_SR2.

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