2

Electrical characteristics

TC = 25 °C unless otherwise specified

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS Drain-source breakdown voltage

VGS = 0 V, ID = 1 mA

800

V

IDSS

Zero gate voltage Drain current

VGS = 0 V, VDS = 800 V

1

µA

VGS = 0 V, VDS = 800 V, TC = 125 °C (1)

50

µA

IGSS

Gate-body leakage current

VDS = 0 V, VGS = ±20 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID =100 µA

3

4

5

V

RDS(on)

Static drain-source on-resistance

VGS = 10 V, ID = 3.5 A

0.73

0.90

Ω

1. Defined by design, not subject to production test.

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz, VGS = 0 V

-

340

-

pF

Coss

Output capacitance

-

37

-

pF

Crss

Reverse transfer capacitance

-

0.65

-

pF

Co(tr) (1) Equivalent capacitance time related

VDS = 0 to 640 V, VGS = 0 V

-

61

-

pF

Co(er) (2)

Equivalent capacitance energy

related

-

22

-

pF

Rg

Intrinsic gate resistance

f = 1 MHz , ID= 0 A

-

7

-

Ω

Qg

Total gate charge

VDD = 640 V, ID = 7 A

VGS= 0 to 10 V

See (Figure 15. Test circuit for gate charge behavior)

-

12

-

nC

Qgs

Gate-source charge

-

3.8

-

nC

Qgd

Gate-drain charge

-

6.7

-

nC

1. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

2. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS

Table 6. Switching times

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

td(on)

Turn-on delay

time

VDD= 400 V, ID =3.5 A, RG = 4.7 Ω

VGS = 10 V

See (Figure 14. Test circuit for resistive load switching times and

Figure 19. Switching time waveform)

-

11

-

ns

tr

Rise time

-

5.7

-

ns

td(off)

Turn-off delay

time

-

65.3

-

ns

tf

Fall time

-

13.6

-

ns

STD9N80K5

Electrical characteristics

DS11297 - Rev 3

page 3/19