STD5N65M6

Electrical ratings

DocID029222 Rev 1

3/15

1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 25

V

ID

Drain current (continuous) at TC = 25 °C

4

A

ID

Drain current (continuous) at TC = 100 °C

2.5

A

IDM(1)

Drain current (pulsed)

16

A

PTOT

Total dissipation at TC = 25 °C

45

W

dv/dt(2)

Peak diode recovery voltage slope

5

V/ns

dv/dt(3)

MOSFET dv/dt ruggedness

50

TJ

Operating junction temperature range

-55 to 150

°C

Tstg

Storage temperature range

Notes:

(1)Pulse width limited by safe operating area

(2)ISD ≤ 4 A, di/dt = 400 A/μs; VDS peak < V(BR)DSS, VDD = 400 V

(3)VDS ≤ 520 V

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

2.78

°C/W

Rthj-pcb(1)

Thermal resistance junction-pcb

50

Notes:

(1)When mounted on FR-4 board of inch², 2oz Cu.

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)

1

A

Eas

Single pulse avalanche energy (starting Tj=25°C, ID= IAR, VDD=50 V)

90

mJ